PSMN4R8-100BSE_15 Datasheet, PDF (8/13 Pages) NXP Semiconductors – N-channel 100 V 4.8 mΩ standard level MOSFET in D2PAK

NXP Semiconductors
PSMN4R8-100BSE
N-channel 100 V 4.8 mΩ standard level MOSFET in D2PAK
30
R_DSon
4.5
5
(mΩ)
20
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5.5
3.2
a
2.4
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1.6
10
6
0.8
V_GS(V) = 10
0
0
40
80
I_D (A) ¹²⁰
Fig. 12. Drain-source on-state resistance as a function
of drain current; typical values
0
-60
0
60
120
180
T_j (°C)
Fig. 13. Normalized drain-source on-state resistance
factor as a function of junction temperature
V_DS
I_D
V_GS(pl)
V_GS(th)
V_GS
Q_GS1 Q_GS2
Q_GS
Q_GD
Q_G(tot)
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Fig. 14. Gate charge waveform definitions
10
V_GS
(V)
8
6
4
20 V
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80 V
V_DS= 50V
2
0
0
50
100
150
200
250
Q_G (nC)
Fig. 15. Gate-source voltage as a function of gate
charge; typical values
PSMN4R8-100BSE
Product data sheet
All information provided in this document is subject to legal disclaimers.
12 April 2013
© NXP B.V. 2013. All rights reserved
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