PSMN4R8-100BSE_15 Datasheet, PDF (7/13 Pages) NXP Semiconductors – N-channel 100 V 4.8 mΩ standard level MOSFET in D2PAK

NXP Semiconductors
PSMN4R8-100BSE
N-channel 100 V 4.8 mΩ standard level MOSFET in D2PAK
200
g_fs
(S)
160
003aaj970
300
I_D
(A)
240
003aaj971
120
180
80
120
40
0
0
60
120
180
240 _{ID (A)} 300
Fig. 8. Forward transconductance as a function of
drain current; typical values
60
T_j = 150 °C
T_j = 25 °C
0
0
2
4
6 _VGS(V) 8
Fig. 9. Transfer characteristics; drain current as a
function of gate-source voltage; typical values
10^{- 1}
I_D
(A)
10^{- 2}
10^{- 3}
10^{- 4}
10^{- 5}
03aa35
min typ max
5
V_GS(th)
(V)
4
3
2
1
003aad280
max
typ
min
10^{- 6}
0
2
4
6
V_GS (V)
Fig. 10. Sub-threshold drain current as a function of
gate-source voltage
0
- 60
0
60
120
180
T_j (°C)
Fig. 11. Gate-source threshold voltage as a function of
junction temperature
PSMN4R8-100BSE
Product data sheet
All information provided in this document is subject to legal disclaimers.
12 April 2013
© NXP B.V. 2013. All rights reserved
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