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| PSMN4R8-100BSE_15 Datasheet, PDF (3/13 Pages) NXP Semiconductors – N-channel 100 V 4.8 mΩ standard level MOSFET in D2PAK | |||
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NXP Semiconductors
PSMN4R8-100BSE
N-channel 100 V 4.8 mΩ standard level MOSFET in D2PAK
Symbol
ID
Parameter
drain current
IDM
peak drain current
Ptot
total power dissipation
Tstg
storage temperature
Tj
junction temperature
Tsld(M)
peak soldering temperature
Source-drain diode
IS
source current
ISM
peak source current
Avalanche Ruggedness
EDS(AL)S
non-repetitive drain-source
avalanche energy
Conditions
VGS = 10 V; Tj = 25 °C; Fig. 1
[1]
VGS = 10 V; Tmb = 100 °C; Fig. 1
[1]
pulsed; tp ⤠10 µs; Tmb = 25 °C; Fig. 4
Tmb = 25 °C; Fig. 2
Tmb = 25 °C
[1]
pulsed; tp ⤠10 µs; Tmb = 25 °C
VGS = 10 V; Tj(init) = 25 °C; ID = 120 A;
Vsup ⤠100 V; RGS = 50 Ω; unclamped;
Fig. 3
[1] Continuous current limited by package.
200
ID
(A)
160
(1)
120
003aaj964
120
Pder
(%)
80
Min Max Unit
-
120 A
-
120 A
-
707 A
-
405 W
-55 175 °C
-55 175 °C
-
260 °C
-
120 A
-
707 A
-
542 mJ
03aa16
80
40
40
0
0
50
100
150
200
Tmb(°C)
(1) Capped at 120A due to package
Fig. 1. Continuous drain current as a function of
mounting base temperature
0
0
50
100
150
200
Tmb (°C)
Fig. 2. Normalized total power dissipation as a
function of mounting base temperature
PSMN4R8-100BSE
Product data sheet
All information provided in this document is subject to legal disclaimers.
12 April 2013
© NXP B.V. 2013. All rights reserved
3 / 13
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