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PSMN4R8-100BSE_15 Datasheet, PDF (6/13 Pages) NXP Semiconductors – N-channel 100 V 4.8 mΩ standard level MOSFET in D2PAK
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NXP Semiconductors
PSMN4R8-100BSE
N-channel 100 V 4.8 mΩ standard level MOSFET in D2PAK
Symbol
Parameter
Conditions
Dynamic characteristics
QG(tot)
total gate charge
ID = 25 A; VDS = 50 V; VGS = 10 V;
Fig. 14; Fig. 15
ID = 0 A; VDS = 0 V; VGS = 10 V
QGS
gate-source charge
ID = 25 A; VDS = 50 V; VGS = 10 V;
QGD
gate-drain charge
Fig. 14; Fig. 15
VGS(pl)
gate-source plateau
voltage
ID = 25 A; VDS = 50 V; Fig. 14; Fig. 15
Ciss
input capacitance
VDS = 50 V; VGS = 0 V; f = 1 MHz;
Coss
output capacitance
Tj = 25 °C; Fig. 16
Crss
reverse transfer
capacitance
td(on)
tr
turn-on delay time
rise time
VDS = 50 V; RL = 2 Ω; VGS = 10 V;
RG(ext) = 4.7 Ω
td(off)
turn-off delay time
tf
fall time
Source-drain diode
VSD
source-drain voltage IS = 25 A; VGS = 0 V; Tj = 25 °C; Fig. 17
trr
reverse recovery time IS = 25 A; dIS/dt = -100 A/µs; VGS = 0 V;
Qr
recovered charge
VDS = 50 V
Min Typ Max Unit
-
196 278 nC
-
166.9 234 nC
-
40
56
nC
-
59
83
nC
-
4.3 -
V
-
10665 14400 pF
-
674 910 pF
-
459 643 pF
-
41
61.5 ns
-
65
97.5 ns
-
127 190.5 ns
-
69
103.5 ns
-
0.79 1.2 V
-
72
94
ns
-
227 296 nC
120
10 6
ID
(A)
80
003aaj968
5.5
5
20
RDSon
(mΩ)
15
10
003aaj969
40
4.5
5
VGS(V) = 4
0
0
1
2
3 VDS(V) 4
0
0
4
8
12 VGS(V) 16
Fig. 6. Output characteristics; drain current as a
Fig. 7. Drain-source on-state resistance as a function
function of drain-source voltage; typical values
of gate-source voltage; typical values
PSMN4R8-100BSE
Product data sheet
All information provided in this document is subject to legal disclaimers.
12 April 2013
© NXP B.V. 2013. All rights reserved
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