PSMN4R8-100BSE_15 Datasheet, PDF (1/13 Pages) NXP Semiconductors – N-channel 100 V 4.8 mΩ standard level MOSFET in D2PAK

PSMN4R8-100BSE
N-channel 100 V 4.8 mΩ standard level MOSFET in D2PAK
12 April 2013
Product data sheet
1. General description
Standard level N-channel MOSFET in a D2PAK package qualified to 175 °C. Part of
NXP's "NextPower Live" portfolio, the PSMN4R8-100BSE complements the latest "hot-
swap" controllers - robust enough to withstand substantial inrush currents during turn on,
whilst offering a low R_DS(on) characteristic to keep temperatures down and efficiency up in
continued use. Ideal for telecommunication systems based on a 48 V backplane / supply
rail.
2. Features and benefits
• Enhanced forward biased safe operating area for superior linear mode operation
• Very low R_DS(on) for low conduction losses
3. Applications
• Electronic fuse
• Hot swap
• Load switch
• Soft start
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
V_DS
drain-source voltage T_j ≥ 25 °C; T_j ≤ 175 °C
I_DM
peak drain current
pulsed; T_mb = 25 °C; t_p ≤ 10 µs; Fig. 4
P_tot
total power dissipation T_mb = 25 °C; Fig. 2
Static characteristics
R_DSon
drain-source on-state V_GS = 10 V; I_D = 25 A; T_j = 25 °C;
resistance
Fig. 12
Dynamic characteristics
Q_GD
Q_G(tot)
gate-drain charge
total gate charge
V_GS = 10 V; I_D = 25 A; V_DS = 50 V;
Fig. 14; Fig. 15
Min Typ Max Unit
-
-
100 V
-
-
707 A
-
-
405 W
-
4.1 4.8 mΩ
-
59
83
nC
-
196 278 nC
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