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| PSMN4R8-100BSE_15 Datasheet, PDF (4/13 Pages) NXP Semiconductors – N-channel 100 V 4.8 mΩ standard level MOSFET in D2PAK | |||
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NXP Semiconductors
103
IAL
(A)
102
10
PSMN4R8-100BSE
N-channel 100 V 4.8 mΩ standard level MOSFET in D2PAK
003aaj965
(1)
(2)
1
10-3
10-2
10-1
1
10
tAL (ms)
Fig. 3. Single pulse avalanche rating; avalanche current as a function of avalanche time
104
ID
(A)
103
102
10
1
Limit RDSon= VDS/ ID
DC
003aaj966
tp =10 µ s
100 µ s
1 ms
10 ms
100 ms
10-1
10-1
1
10
102
103
VDS(V)
Fig. 4. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
9. Thermal characteristics
Table 6.
Symbol
Rth(j-mb)
Rth(j-a)
Thermal characteristics
Parameter
thermal resistance
from junction to
mounting base
thermal resistance
from junction to
ambient
Conditions
Fig. 5
Minimum footprint; mounted on a
printed circuit board
PSMN4R8-100BSE
Product data sheet
All information provided in this document is subject to legal disclaimers.
12 April 2013
Min Typ Max Unit
-
0.3 0.37 K/W
-
50
-
K/W
© NXP B.V. 2013. All rights reserved
4 / 13
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