PSMN3R4-30BLE_15 Datasheet, PDF (8/13 Pages) NXP Semiconductors – N-channel 30 V 3.4 mΩ logic level MOSFET in D2PAK

NXP Semiconductors
PSMN3R4-30BLE
N-channel 30 V 3.4 mΩ logic level MOSFET in D2PAK
3
V_GS(th)
(V)
2
1
max
typ
min
003aaj515
10^-1
I_D
(A)
10^-2
10^-3
10^-4
10^-5
003aaj514
min
typ max
0
-60
0
60
120
180
T_j (°C)
10^-6
0
1
2
3
V _GS (V)
Fig. 10. Gate-source threshold voltage as a function of Fig. 11. Sub-threshold drain current as a function of
junction temperature
gate-source voltage
30
003aaj369
2
2.6
2.8
V_GS(V) = 3
a
R_DSon
(mΩ)
1.5
20
3.5
1
003aag820
10
4
0.5
4.5 ¹⁰
0
10
30
50
70
90
I_D (A)
Fig. 12. Drain-source on-state resistance as a function
of drain current; typical values
0
-60
0
60
120
180
T_j (°C)
Fig. 13. Normalized drain-source on-state resistance
factor as a function of junction temperature
PSMN3R4-30BLE
Product data sheet
All information provided in this document is subject to legal disclaimers.
12 October 2012
© NXP B.V. 2012. All rights reserved
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