PSMN3R4-30BLE_15 Datasheet, PDF (1/13 Pages) NXP Semiconductors – N-channel 30 V 3.4 mΩ logic level MOSFET in D2PAK

PSMN3R4-30BLE
N-channel 30 V 3.4 mΩ logic level MOSFET in D2PAK
12 October 2012
Product data sheet
1. Product profile
1.1 General description
Logic level N-channel MOSFET in D2PAK package qualified to 175 °C. This product
is designed and qualified for use in a wide range of industrial, communications and
domestic equipment.
1.2 Features and benefits
• Enhanced forward biased safe operating area for superior linear mode operation
• Very low Rdson for low conduction losses
1.3 Applications
• Electronic fuse
• Hot swap
• Load switch
• Soft start
1.4 Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
V_DS
drain-source voltage T_j ≥ 25 °C; T_j ≤ 175 °C
I_D
drain current
T_mb = 25 °C; V_GS = 10 V; Fig. 1
P_tot
total power dissipation T_mb = 25 °C; Fig. 2
Static characteristics
R_DSon
drain-source on-state V_GS = 10 V; I_D = 25 A; T_j = 25 °C;
resistance
Fig. 12
V_GS = 4.5 V; I_D = 25 A; T_j = 25 °C;
Fig. 12
Dynamic characteristics
Q_GD
gate-drain charge
V_GS = 4.5 V; I_D = 25 A; V_DS = 15 V;
Fig. 14; Fig. 15
Q_G(tot)
total gate charge
V_GS = 10 V; I_D = 25 A; V_DS = 15 V;
Fig. 14; Fig. 15
Min Typ Max Unit
-
-
30
V
[1]
-
-
120 A
-
-
178 W
-
2.95 3.4 mΩ
-
4.25 5
mΩ
-
12.2 -
nC
-
81
-
nC
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