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PSMN3R4-30BLE_15 Datasheet, PDF (5/13 Pages) NXP Semiconductors – N-channel 30 V 3.4 mΩ logic level MOSFET in D2PAK
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NXP Semiconductors
PSMN3R4-30BLE
N-channel 30 V 3.4 mΩ logic level MOSFET in D2PAK
1
Zth(j-mb)
(K/W)
10-1
δ = 0.5
0.2
0.1
0.05
0.02
10-2
003aaj364
P
δ=
tp
T
single shot
tp
t
T
10-3
10-6
10-5
10-4
10-3
10-2
10-1
tp (s)
1
Fig. 5. Transient thermal impedance from junction to mounting base as a function of pulse duration
7. Characteristics
Table 7. Characteristics
Symbol
Parameter
Conditions
Static characteristics
V(BR)DSS
drain-source
breakdown voltage
ID = 250 µA; VGS = 0 V; Tj = -55 °C
ID = 250 µA; VGS = 0 V; Tj = 25 °C
VGS(th)
gate-source threshold ID = 1 mA; VDS = VGS; Tj = 175 °C;
voltage
Fig. 10
ID = 1 mA; VDS = VGS; Tj = 25 °C;
Fig. 11; Fig. 10
ID = 1 mA; VDS = VGS; Tj = -55 °C;
Fig. 10
IDSS
drain leakage current VDS = 30 V; VGS = 0 V; Tj = 25 °C
VDS = 30 V; VGS = 0 V; Tj = 100 °C
IGSS
gate leakage current VGS = 16 V; VDS = 0 V; Tj = 25 °C
VGS = -16 V; VDS = 0 V; Tj = 25 °C
RDSon
drain-source on-state VGS = 10 V; ID = 25 A; Tj = 25 °C;
resistance
Fig. 12
VGS = 10 V; ID = 25 A; Tj = 100 °C;
Fig. 13; Fig. 12
VGS = 4.5 V; ID = 25 A; Tj = 25 °C;
Fig. 12
VGS = 10 V; ID = 25 A; Tj = 175 °C;
Fig. 13; Fig. 12
PSMN3R4-30BLE
Product data sheet
All information provided in this document is subject to legal disclaimers.
12 October 2012
Min Typ Max Unit
27
-
-
V
30
-
-
V
0.5 -
-
V
1.3 1.7 2.15 V
-
-
2.45 V
-
0.2 5
µA
-
-
100 µA
-
10
100 nA
-
10
100 nA
-
2.95 3.4 mΩ
-
-
5.1 mΩ
-
4.25 5
mΩ
-
-
6.5 mΩ
© NXP B.V. 2012. All rights reserved
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