PSMN3R4-30BLE_15 Datasheet, PDF (7/13 Pages) NXP Semiconductors – N-channel 30 V 3.4 mΩ logic level MOSFET in D2PAK

NXP Semiconductors
PSMN3R4-30BLE
N-channel 30 V 3.4 mΩ logic level MOSFET in D2PAK
100
I_D
10
(A)
80
V_GS(V) = 4.5
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3.5
20
R_DSon
(mΩ)
15
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60
10
40
3
2.8
20
2.6
2.4
0
0
0.5
1
1.5 _VDS(V) 2
5
0
0
4
8
12
16
V_GS (V)
Fig. 6. Output characteristics; drain current as a
Fig. 7. Drain-source on-state resistance as a function
function of drain-source voltage; typical values
of gate-source voltage; typical values
120
g_fs
(S)
90
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60
30
0
0
20
40
60
80
100
I_D (A)
Fig. 8. Forward transconductance as a function of
drain current; typical values
120
I_D
(A)
100
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80
60
40
20
0
0
T_j = 175 °C
T_j = 25 °C
1
2
3
4
V_GS(V)
Fig. 9. Transfer characteristics; drain current as a
function of gate-source voltage; typical values
PSMN3R4-30BLE
Product data sheet
All information provided in this document is subject to legal disclaimers.
12 October 2012
© NXP B.V. 2012. All rights reserved
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