PSMN3R4-30BLE_15 Datasheet, PDF (2/13 Pages) NXP Semiconductors – N-channel 30 V 3.4 mΩ logic level MOSFET in D2PAK

NXP Semiconductors
PSMN3R4-30BLE
N-channel 30 V 3.4 mΩ logic level MOSFET in D2PAK
Symbol
Parameter
Avalanche ruggedness
E_DS(AL)S
non-repetitive drain-
source avalanche
energy
Conditions
V_GS = 10 V; T_j(init) = 25 °C; I_D = 120 A;
V_sup ≤ 30 V; unclamped; R_GS = 50 Ω;
Fig. 3
[1] Capped at 120A due to package
Min Typ Max Unit
-
-
246 mJ
2. Pinning information
Table 2. Pinning information
Pin
Symbol Description
Simplified outline
1
G
gate
mb
2
D
drain[1]
3
S
source
mb
D
mounting base; connected to
drain
2
13
D2PAK (SOT404)
[1] It is not possible to make connection to pin 2.
Graphic symbol
D
G
mbb076 S
3. Ordering information
Table 3. Ordering information
Type number
Package
Name
PSMN3R4-30BLE
D2PAK
Description
Version
plastic single-ended surface-mounted package (D2PAK); 3 leads SOT404
(one lead cropped)
4. Marking
Table 4. Marking codes
Type number
PSMN3R4-30BLE
Marking code
PSMN3R4-30BLE
5. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
V_DS
drain-source voltage
T_j ≥ 25 °C; T_j ≤ 175 °C
V_DGR
drain-gate voltage
T_j ≤ 175 °C; T_j ≥ 25 °C; R_GS = 20 kΩ
PSMN3R4-30BLE
All information provided in this document is subject to legal disclaimers.
Product data sheet
12 October 2012
Min Max Unit
-
30
V
-
30
V
© NXP B.V. 2012. All rights reserved
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