PSMN038-100YL_15 Datasheet, PDF (8/13 Pages) NXP Semiconductors – N-channel 100 V 37.5 mΩ logic level MOSFET in LFPAK56

NXP Semiconductors
PSMN038-100YL
N-channel 100 V 37.5 mΩ logic level MOSFET in LFPAK56
3
V_GS(th)
(V)
2.5
2
1.5
1
0.5
max
typ
min
003aah025
10^-1
I_D
(A)
10^-2
10^-3
10^-4
10^-5
003aah026
min
typ max
0
-60
0
60
120
180
T_j (°C)
10^-6
0
1
2
3
V_GS (V)
Fig. 10. Gate-source threshold voltage as a function of Fig. 11. Sub-threshold drain current as a function of
junction temperature
gate-source voltage
80
R_DSon
(mΩ)
60
40
20
003aaj060
2.6
2.8
3.5 ³
4.5
V_GS(V) = 10
3
a
2.4
1.8
1.2
0.6
003aaj820
0
0
10
20
30
40
I_D (A)
T_j = 25 °C; t_p = 300 μs
Fig. 12. Drain-source on-state resistance as a function
of drain current; typical values
0
-60
0
60
120
180
T_{j (}°C)
Fig. 13. Normalized drain-source on-state resistance
factor as a function of junction temperature
PSMN038-100YL
Product data sheet
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1 May 2013
© NXP B.V. 2013. All rights reserved
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