PSMN038-100YL_15 Datasheet, PDF (1/13 Pages) NXP Semiconductors – N-channel 100 V 37.5 mΩ logic level MOSFET in LFPAK56

PSMN038-100YL
N-channel 100 V 37.5 mΩ logic level MOSFET in LFPAK56
1 May 2013
Product data sheet
1. General description
Logic level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in
LFPAK56 package. This product has been designed and qualified for use in a wide range
of industrial, communications and domestic equipment.
2. Features and benefits
• High efficiency due to low switching and conduction losses
• Suitable for logic level gate drive
• LFPAK56 package is footprint compatible with other Power-SO8 types
• Qualified to 175 °C
3. Applications
• DC-to-DC converters
• Load switch
• TV power supplies
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
V_DS
drain-source voltage T_j ≥ 25 °C; T_j ≤ 175 °C
I_D
drain current
V_GS = 10 V; T_mb = 25 °C; Fig. 1
P_tot
total power dissipation T_mb = 25 °C; Fig. 2
Static characteristics
R_DSon
drain-source on-state V_GS = 10 V; I_D = 5 A; T_j = 175 °C;
resistance
Fig. 13; Fig. 12
V_GS = 10 V; I_D = 5 A; T_j = 25 °C; Fig. 12
Dynamic characteristics
Q_G(tot)
total gate charge
V_GS = 5 V; I_D = 5 A; V_DS = 80 V;
T_j = 25 °C; Fig. 14; Fig. 15
Q_GD
gate-drain charge
V_GS = 10 V; I_D = 5 A; V_DS = 80 V;
T_j = 25 °C; Fig. 14; Fig. 15
Min Typ Max Unit
-
-
100 V
-
-
30
A
-
-
94.9 W
-
-
103.5 mΩ
-
30.2 37.5 mΩ
-
21.6 -
nC
-
8.3 -
nC
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