PSMN038-100YL_15 Datasheet, PDF (7/13 Pages) NXP Semiconductors – N-channel 100 V 37.5 mΩ logic level MOSFET in LFPAK56

NXP Semiconductors
PSMN038-100YL
N-channel 100 V 37.5 mΩ logic level MOSFET in LFPAK56
64
I_D
(A)
48
V_GS(V) = 10
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4.5
3
100
R_DSon
(mΩ)
80
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60
2.8
32
2.6
16
2.4
2.2
0
0
1
2
3 _VDS(V) 4
T_j = 25 °C; t_p = 300 μs
Fig. 6. Output characteristics; drain current as a
function of drain-source voltage; typical values
40
20
0
0
2
4
6
8
10
V_GS(V)
Fig. 7. Drain-source on-state resistance as a function
of gate-source voltage; typical values
100
g_fs
(S)
80
003aak935
50
I_D
(A)
40
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60
30
40
20
20
0
0
10
20
30
40
50
60
I_D (A)
Fig. 8. Forward transconductance as a function of
drain current; typical values
10
175°C
T_j = 25°C
0
0 0.5 1 1.5 2 2.5 3 3.5 4
V_GS (V)
Fig. 9. Transfer characteristics; drain current as a
function of gate-source voltage; typical values
PSMN038-100YL
Product data sheet
All information provided in this document is subject to legal disclaimers.
1 May 2013
© NXP B.V. 2013. All rights reserved
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