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| PSMN038-100YL_15 Datasheet, PDF (3/13 Pages) NXP Semiconductors – N-channel 100 V 37.5 mΩ logic level MOSFET in LFPAK56 | |||
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NXP Semiconductors
PSMN038-100YL
N-channel 100 V 37.5 mΩ logic level MOSFET in LFPAK56
Symbol
Parameter
IDM
peak drain current
Ptot
total power dissipation
Tstg
storage temperature
Tj
junction temperature
Tsld(M)
peak soldering temperature
Source-drain diode
IS
source current
ISM
peak source current
Avalanche ruggedness
EDS(AL)S
non-repetitive drain-source
avalanche energy
Conditions
Tmb = 100 °C; VGS = 10 V; Fig. 1
Tmb = 25 °C; pulsed; tp ⤠10 µs; Fig. 4
Tmb = 25 °C; Fig. 2
Tmb = 25 °C
pulsed; tp ⤠10 µs; Tmb = 25 °C
ID = 30 A; Vsup ⤠100 V; RGS = 50 Ω;
VGS = 10 V; Tj(init) = 25 °C; unclamped;
Fig. 3
32
ID
(A)
24
003aaj050
120
Pder
(%)
80
16
40
8
Min Max Unit
-
21.3 A
-
120 A
-
94.9 W
-55 175 °C
-55 175 °C
-
260 °C
-
79
A
-
120 A
-
45.1 mJ
03aa16
0
0
50
100
150
200
Tmb(°C)
Fig. 1. Continuous drain current as a function of
mounting base temperature
0
0
50
100
150
200
Tmb (°C)
Fig. 2. Normalized total power dissipation as a
function of mounting base temperature
PSMN038-100YL
Product data sheet
All information provided in this document is subject to legal disclaimers.
1 May 2013
© NXP B.V. 2013. All rights reserved
3 / 13
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