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| PSMN038-100YL_15 Datasheet, PDF (5/13 Pages) NXP Semiconductors – N-channel 100 V 37.5 mΩ logic level MOSFET in LFPAK56 | |||
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NXP Semiconductors
PSMN038-100YL
N-channel 100 V 37.5 mΩ logic level MOSFET in LFPAK56
10
Zth(j-mb)
(K/W)
003aai733
1
δ = 0.5
0.2
0.1
10-1
0.05
0.02
10-2
10-6
single shot
10-5
10-4
10-3
10-2
P
tp
δ= T
tp
t
T
10-1
1
tp (s)
Fig. 5. Transient thermal impedance from junction to mounting base as a function of pulse duration
10. Characteristics
Table 7. Characteristics
Symbol
Parameter
Conditions
Static characteristics
V(BR)DSS
drain-source
breakdown voltage
ID = 250 µA; VGS = 0 V; Tj = 25 °C
ID = 250 µA; VGS = 0 V; Tj = -55 °C
VGS(th)
gate-source threshold ID = 1 mA; VDS = VGS; Tj = 25 °C;
voltage
Fig. 10; Fig. 11
ID = 1 mA; VDS = VGS; Tj = -55 °C;
Fig. 10
ID = 1 mA; VDS = VGS; Tj = 175 °C;
Fig. 10
IDSS
drain leakage current VDS = 100 V; VGS = 0 V; Tj = 25 °C
VDS = 100 V; VGS = 0 V; Tj = 175 °C
IGSS
gate leakage current VGS = 16 V; VDS = 0 V; Tj = 25 °C
VGS = -16 V; VDS = 0 V; Tj = 25 °C
RDSon
drain-source on-state
resistance
VGS = 5 V; ID = 5 A; Tj = 25 °C; Fig. 12
VGS = 10 V; ID = 5 A; Tj = 175 °C;
Fig. 13; Fig. 12
VGS = 10 V; ID = 5 A; Tj = 25 °C; Fig. 12
VGS = 5 V; ID = 5 A; Tj = 175 °C;
Fig. 13; Fig. 12
RG
gate resistance
f = 1 MHz
Min Typ Max Unit
100 -
-
V
90
-
-
V
1.4 1.7 2.1 V
-
-
2.45 V
0.5 -
-
V
-
0.02 1
µA
-
-
500 µA
-
-
100 nA
-
-
100 nA
-
31.3 38
mΩ
-
-
103.5 mΩ
-
30.2 37.5 mΩ
-
-
105 mΩ
-
1.64 -
Ω
PSMN038-100YL
Product data sheet
All information provided in this document is subject to legal disclaimers.
1 May 2013
© NXP B.V. 2013. All rights reserved
5 / 13
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