PSMN038-100K Datasheet, PDF (8/13 Pages) NXP Semiconductors – N-channel enhancement mode field-effect transistor

Philips Semiconductors
PSMN038-100K
N-channel enhancement mode field-effect transistor
50
IS ^{VGS = 0 V}
(A)
40
30
03ae02
10
VGS ^{ID = 6.3 A}
(V) T_j = 25 ºC
8
6
03ae04
VDD = 20 V 50 V 80 V
20
4
10
150 ºC
Tj = 25 ºC
2
0
0
0.4
0.8
VSD (V) 1.2
T_j = 25 °C and 150 °C; V_GS = 0 V
Fig 13. Source (diode forward) current as a function of
source-drain (diode forward) voltage; typical
values.
0
0
15
30 _{QG (nC)} 45
I_D = 6.3 A; V_DD = 20 V, 50 V and 80 V
Fig 14. Gate-source voltage as a function of gate
charge; typical values.
9397 750 07897
Product specification
Rev. 01 — 16 January 2001
© Philips Electronics N.V. 2001. All rights reserved.
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