PSMN038-100K Datasheet, PDF (2/13 Pages) NXP Semiconductors – N-channel enhancement mode field-effect transistor

Philips Semiconductors
PSMN038-100K
N-channel enhancement mode field-effect transistor
5. Quick reference data
Table 2: Quick reference data
Symbol Parameter
V_DS
I_D
P_tot
T_j
R_DSon
drain-source voltage (DC)
drain current (DC)
total power dissipation
junction temperature
drain-source on-state resistance
6. Limiting values
Conditions
T_j = 25 to 150 °C
T_sp = 80 °C; Figure 2 and 3
T_sp = 80 °C; Figure 1
V_GS = 10 V; I_D = 5.2 A; T_j = 25 °C
Table 3: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
V_DS
drain-source voltage (DC)
T_j = 25 to 150 °C
V_GS
gate-source voltage (DC)
I_D
drain current (DC)
I_DM
peak drain current
P_tot
total power dissipation
T_sp = 80 °C
T_sp = 25 °C; pulsed; t_p ≤ 10 µs
T_sp = 80 °C
T_stg
storage temperature
T_j
operating junction temperature
Source-drain diode
I_S
source (diode forward) current (DC) T_sp = 80 °C
I_SM
peak source (diode forward) current T_sp = 25 °C; pulsed; t_p ≤ 10 µs
Typ
Max Unit
−
100
V
−
6.3
A
−
3.5
W
−
150
°C
33
38
mΩ
Min
Max Unit
−
100
V
−
±20
V
−
6.3
A
−
50
A
−
3.5
W
−55
+150 °C
−55
+150 °C
−
3.1
A
−
50
A
9397 750 07897
Product specification
Rev. 01 — 16 January 2001
© Philips Electronics N.V. 2001. All rights reserved.
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