PSMN038-100K Datasheet, PDF (6/13 Pages) NXP Semiconductors – N-channel enhancement mode field-effect transistor

Philips Semiconductors
PSMN038-100K
N-channel enhancement mode field-effect transistor
50
ID
VGS = 10 V 7 V
(A)
40
03ad98
6V
50
ID VDS > ID X RDSon
(A)
40
03ae00
30
30
20
5V
10
4.5 V
0
0
1
2
3
4 V_DS (V) 5
20
10
0
0
Tj = 150 ºC
25 ºC
2
4
6 V_GS (V) 8
T_j = 25 °C
Fig 5. Output characteristics: drain current as a
function of drain-source voltage; typical values.
T_j = 25 °C and 150 °C; V_DS > I_D × R_DSon
Fig 6. Transfer characteristics: drain current as a
function of gate-source voltage; typical values.
0.1
RDSon 4.5 V 5 V
(Ω)
0.09
0.08
0.07
0.06
0.05
0.04
0.03
0
10
20
T_j = 25 °C
03ad99
VGS = 6 V
7V
10 V
Tj = 25 ºC
30
40 _{ID (A)} 50
Fig 7. Drain-source on-state resistance as a function
of drain current; typical values.
3
a _2.8
2.6
2.4
2.2
2
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
-60 -20 20
03aa29
60 100 140 180
Tj (oC)
a = -------^R----^D----^S--^o---ⁿ-------
R
D S o n ( 25 ^°C )
Fig 8. Normalized drain-source on-state resistance
factor as a function of junction temperature.
9397 750 07897
Product specification
Rev. 01 — 16 January 2001
© Philips Electronics N.V. 2001. All rights reserved.
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