PSMN038-100K Datasheet, PDF (7/13 Pages) NXP Semiconductors – N-channel enhancement mode field-effect transistor

Philips Semiconductors
PSMN038-100K
N-channel enhancement mode field-effect transistor
03aa32
5
4.5
VGS(th)
(V) ⁴
3.5
max.
3
typ.
2.5
2
min
1.5
1
0.5
0
-60 -20
20
60 100 140 180
Tj (oC)
I_D = 1 mA; V_DS = V_GS
Fig 9. Gate-source threshold voltage as a function of
junction temperature.
10-1
ID
(A) _10-2
03aa35
10-3
10-4
min
typ
max
10-5
10-6
0
1
2
3
4
5
VGS (V)
T_j = 25 °C; V_DS = 5 V
Fig 10. Sub-threshold drain current as a function of
gate-source voltage.
40
VDS > ID X RDSon
gfs
(S)
Tj = 25 ºC
30
150 ºC
20
03ae01
104
Ciss,
Coss,
Crss
(pF)
103
03ae03
Ciss
10
0
0
10
20
30
40 I_D (A) 50
T_j = 25 °C and 150 °C; V_DS > I_D × R_DSon
Fig 11. Forward transconductance as a function of
drain current; typical values.
102
10-1
1
Coss
Crss
10 V_DS (V) 102
V_GS = 0 V; f = 1 MHz
Fig 12. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values.
9397 750 07897
Product specification
Rev. 01 — 16 January 2001
© Philips Electronics N.V. 2001. All rights reserved.
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