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PSMN038-100K Datasheet, PDF (5/13 Pages) NXP Semiconductors – N-channel enhancement mode field-effect transistor
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Philips Semiconductors
PSMN038-100K
N-channel enhancement mode field-effect transistor
8. Characteristics
Table 5: Characteristics
Tj = 25 °C unless otherwise specified
Symbol Parameter
Conditions
Static characteristics
V(BR)DSS drain-source breakdown voltage
VGS(th) gate-source threshold voltage
IDSS
drain-source leakage current
IGSS
RDSon
gate-source leakage current
drain-source on-state resistance
Dynamic characteristics
ID = 250 µA; VGS = 0 V
ID = 1 mA; VDS = VGS; Figure 9
Tj = 25 °C
Tj = 150 °C
Tj = −55 °C
VDS = 80 V; VGS = 0 V; Tj = 25 °C
VDS = 100 V; VGS = 0 V; Tj = 150 °C
VGS = ±20 V; VDS = 0 V
VGS = 10 V; ID = 5.2 A; Figure 7 and 8
Tj = 25 °C
Tj = 150 °C
gfs
forward transconductance
Qg(tot) total gate charge
Qgs
gate-source charge
Qgd
gate-drain (Miller) charge
Ciss
input capacitance
Coss
output capacitance
Crss
reverse transfer capacitance
td(on)
turn-on delay time
tr
rise time
td(off)
turn-off delay time
tf
fall time
Source-drain (reverse) diode
VDS = 15 V; ID = 6.3 A; Figure 11
ID = 6.3 A; VDD = 50 V; VGS = 10 V; Figure 14
VGS = 0 V; VDS = 25 V; f = 1 MHz; Figure 12
VDD = 50 V; ID = 1 A; VGS = 10 V; RG = 6 Ω
VSD
source-drain (diode forward) voltage IS = 2.3 A; VGS = 0 V; Figure 13
trr
reverse recovery time
IS = 6.3 A; dIS/dt = −100 A/µs; VGS = 0 V
Qr
recovery charge
Min Typ Max Unit
100 130 − V
2−
1.2 −
−−
−−
−−
−−
4V
−V
6V
1 µA
0.5 mA
100 nA
− 33 38 mΩ
− 76 88 mΩ
− 20 − S
− 43 − nC
− 6.5 − nC
− 16 21.5 nC
− 1740 − pF
− 220 − pF
− 135 − pF
− 15 30 ns
− 13 25 ns
− 50 80 ns
− 25 40 ns
− 0.7 1.1 V
− 85 − ns
− 0.3 − µC
9397 750 07897
Product specification
Rev. 01 — 16 January 2001
© Philips Electronics N.V. 2001. All rights reserved.
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