PSMN038-100K Datasheet, PDF (3/13 Pages) NXP Semiconductors – N-channel enhancement mode field-effect transistor

Philips Semiconductors
PSMN038-100K
N-channel enhancement mode field-effect transistor
120
Pder
(%)
100
03aa17
80
60
40
20
0
0 25 50 75 100 125 150 175
Tsp (oC)
P_der
=
-------^P----^t--^o--^t-------
P
×
100
%
t o t ( 25 ^°C )
Fig 1. Normalized total power dissipation as a
function of solder point temperature.
120
Ider
(%)₁₀₀
03aa25
80
60
40
20
0
0 25 50 75 100 125 150 175
Tsp (oC)
V_GS ≥ 5 V
I_der = -_I------^I---^D-------- × 100%
D ( 25 ^°C )
Fig 2. Normalized continuous drain current as a
function of solder point temperature.
102
ID
RDSon = VDS/ ID
(A)
10
1
P
10-1
δ
=
tp
T
tp
t
T
10-2
10-1
1
D.C.
10
03ad97
tp = 10 µs
100 µs
1 ms
10 ms
100 ms
102
VDS (V)
103
T_sp = 25 °C; I_DM is single pulse
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
9397 750 07897
Product specification
Rev. 01 — 16 January 2001
© Philips Electronics N.V. 2001. All rights reserved.
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