PSMN016-100YS_11 Datasheet, PDF (8/15 Pages) NXP Semiconductors – N-channel 100 V 16.3 mΩ standard level MOSFET in LFPAK

NXP Semiconductors
PSMN016-100YS
N-channel 100 V 16.3 mΩ standard level MOSFET in LFPAK
60
ID
(A)
45
30
15
0
0
003aad884
Tj = 175 °C
Tj = 25 °C
2
4
6
VGS (V)
5
V_GS(th)
(V)
4
3
2
1
0
−60
0
003aad280
max
typ
min
60
120
180
T_j (°C)
Fig 9. Transfer characteristics: drain current as a
Fig 10. Gate-source threshold voltage as a function of
function of gate-source voltage; typical values
junction temperature
10^−1
I_D
(A)
10^−2
10^−3
10^−4
03aa35
min typ max
3.2
a
2.4
1.6
003aad774
0.8
10^−5
10^−6
0
2
4
6
V_GS (V)
0
-60
0
60
120
180
T_j (°C)
Fig 11. Sub-threshold drain current as a function of
gate-source voltage
Fig 12. Normalized drain-source on-state resistance
factor as a function of junction temperature
PSMN016-100YS
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 4 — 27 September 2011
© NXP B.V. 2011. All rights reserved.
8 of 15