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| PSMN016-100YS_11 Datasheet, PDF (2/15 Pages) NXP Semiconductors – N-channel 100 V 16.3 mΩ standard level MOSFET in LFPAK | |||
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NXP Semiconductors
PSMN016-100YS
N-channel 100 V 16.3 m⦠standard level MOSFET in LFPAK
Table 1. Quick reference data â¦continued
Symbol Parameter
Conditions
Dynamic characteristics
QGD
QG(tot)
gate-drain charge
total gate charge
VGS = 10 V; ID = 30 A;
VDS = 50 V; see Figure 14;
see Figure 15
Avalanche ruggedness
EDS(AL)S
non-repetitive drain-source VGS = 10 V; Tj(init) = 25 °C;
avalanche energy
ID = 51 A; Vsup ⤠100 V;
unclamped; RGS = 50 â¦
Min Typ Max Unit
-
16 -
nC
-
54 -
nC
-
-
87 mJ
2. Pinning information
Table 2.
Pin
1
2
3
4
mb
Pinning information
Symbol Description
S
source
S
source
S
source
G
gate
D
mounting base; connected to drain
Simplified outline
mb
Graphic symbol
D
1234
SOT669 (LFPAK; Power-SO8)
G
mbb076 S
3. Ordering information
Table 3. Ordering information
Type number
Package
Name
PSMN016-100YS LFPAK; Power-SO8
Description
plastic single-ended surface-mounted package; 4 leads
Version
SOT669
PSMN016-100YS
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 4 â 27 September 2011
© NXP B.V. 2011. All rights reserved.
2 of 15
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