PSMN016-100YS_11 Datasheet, PDF (3/15 Pages) NXP Semiconductors – N-channel 100 V 16.3 mΩ standard level MOSFET in LFPAK

NXP Semiconductors
PSMN016-100YS
N-channel 100 V 16.3 mΩ standard level MOSFET in LFPAK
4. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V_DS
V_DGR
V_GS
I_D
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
I_DM
peak drain current
P_tot
total power dissipation
T_stg
storage temperature
T_j
junction temperature
T_sld(M)
peak soldering temperature
Source-drain diode
Conditions
T_j ≥ 25 °C; T_j ≤ 175 °C
T_j ≤ 175 °C; T_j ≥ 25 °C; R_GS = 20 kΩ
V_GS = 10 V; T_mb = 100 °C; see Figure 1
V_GS = 10 V; T_mb = 25 °C; see Figure 1
pulsed; t_p ≤ 10 µs; T_mb = 25 °C; see Figure 3
T_mb = 25 °C; see Figure 2
I_S
source current
I_SM
peak source current
Avalanche ruggedness
T_mb = 25 °C
pulsed; t_p ≤ 10 µs; T_mb = 25 °C
E_DS(AL)S
non-repetitive drain-source
avalanche energy
V_GS = 10 V; T_j(init) = 25 °C; I_D = 51 A;
V_sup ≤ 100 V; unclamped; R_GS = 50 Ω
Min Max Unit
-
100 V
-
100 V
-20 20 V
-
36 A
-
51 A
-
204 A
-
117 W
-55 175 °C
-55 175 °C
-
260 °C
-
51 A
-
204 A
-
87 mJ
60
ID
(A)
40
003aad880
120
P_der
(%)
80
03aa16
20
40
0
0
50
100
150
200
Tmb (°C)
0
0
50
100
150
200
T_mb (°C)
Fig 1. Continuous drain current as a function of
mounting base temperature
Fig 2. Normalized total power dissipation as a
function of mounting base temperature
PSMN016-100YS
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 4 — 27 September 2011
© NXP B.V. 2011. All rights reserved.
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