 English |
|
|
|
|
|
|
|
| PSMN016-100YS_11 Datasheet, PDF (4/15 Pages) NXP Semiconductors – N-channel 100 V 16.3 mΩ standard level MOSFET in LFPAK | |||
| |||
| ◁ |
NXP Semiconductors
PSMN016-100YS
N-channel 100 V 16.3 m⦠standard level MOSFET in LFPAK
103
ID
(A)
102
Limit RDSon = VDS / ID
10
1
10-1
1
DC
10
003aad881
tp = 10 μs
100 μs
1 ms
10 ms
100 ms
102
103
VDS (V)
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
PSMN016-100YS
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 4 â 27 September 2011
© NXP B.V. 2011. All rights reserved.
4 of 15
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese