PSMN016-100YS_11 Datasheet, PDF (1/15 Pages) NXP Semiconductors – N-channel 100 V 16.3 mΩ standard level MOSFET in LFPAK

PSMN016-100YS
N-channel 100 V 16.3 mΩ standard level MOSFET in LFPAK
Rev. 4 — 27 September 2011
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel MOSFET in LFPAK package qualified to 175 °C. This product is
designed and qualified for use in a wide range of industrial, communications and domestic
equipment.
1.2 Features and benefits
 Advanced TrenchMOS provides low
RDSon and low gate charge
 High efficiency gains in switching
power converters
 Improved mechanical and thermal
characteristics
 LFPAK provides maximum power
density in a Power SO8 package
1.3 Applications
 DC-to-DC converters
 Lithium-ion battery protection
 Load switching
 Motor control
 Server power supplies
1.4 Quick reference data
Table 1.
Symbol
V_DS
I_D
Quick reference data
Parameter
drain-source voltage
drain current
P_tot
total power dissipation
T_j
junction temperature
Static characteristics
R_DSon
drain-source on-state
resistance
Conditions
T_j ≥ 25 °C; T_j ≤ 175 °C
T_mb = 25 °C; V_GS = 10 V;
see Figure 1
T_mb = 25 °C; see Figure 2
V_GS = 10 V; I_D = 15 A;
T_j = 100 °C; see Figure 12
V_GS = 10 V; I_D = 15 A;
T_j = 25 °C; see Figure 13
Min Typ Max Unit
-
-
100 V
-
-
51 A
-
-
-55 -
117 W
175 °C
-
-
29.3 mΩ
-
12.7 16.3 mΩ