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| PSMN016-100YS_11 Datasheet, PDF (5/15 Pages) NXP Semiconductors – N-channel 100 V 16.3 mΩ standard level MOSFET in LFPAK | |||
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NXP Semiconductors
PSMN016-100YS
N-channel 100 V 16.3 m⦠standard level MOSFET in LFPAK
5. Thermal characteristics
Table 5.
Symbol
Rth(j-mb)
Thermal characteristics
Parameter
thermal resistance from junction to mounting base
Conditions
see Figure 4
Min Typ Max Unit
-
0.54 1.28 K/W
1
Zth(j-mb)
(K/W)
δ = 0.5
0.2
10-1 0.1
003aad882
0.05
0.02
10-2
single shot
P
δ = tp
T
tp
t
T
10-3
10-6
10-5
10-4
10-3
10-2
10-1
tp (s)
1
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration; typical
values
PSMN016-100YS
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 4 â 27 September 2011
© NXP B.V. 2011. All rights reserved.
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