PSMN016-100BS_15 Datasheet, PDF (8/14 Pages) NXP Semiconductors – N-channel 100V 16 mΩ standard level MOSFET in D2PAK

NXP Semiconductors
PSMN016-100BS
N-channel 100V 16 mΩ standard level MOSFET in D2PAK
80
R_DSon
(mΩ)
V_GS (V) = 5.0
5.2
60
001aal317
5.5
40
20
0
0
6.0
8.0
10.0
15
30
45
60
I_D (A)
V_DS
I_D
V_GS(pl)
V_GS(th)
V_GS
Q_GS1 Q_GS2
Q_GS
Q_GD
Q_G(tot)
003aaa508
Fig 13. Drain-source on-state resistance as a function Fig 14. Gate charge waveform definitions
of drain current; typical values
10
V_GS
(V)
8
6
4
V_DS = 50 V
20 V
001aal320
80 V
10⁴
C
(pF)
10³
001aal321
C_iss
2
0
0
20
40
60
Q_G (nC)
10²
10^−1
1
C_oss
C_rss
10
10²
V_DS (V)
Fig 15. Gate-source voltage as a function of gate
charge; typical values
Fig 16. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
PSMN016-100BS
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 1 March 2012
© NXP B.V. 2012. All rights reserved.
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