PSMN016-100BS_15 Datasheet, PDF (1/14 Pages) NXP Semiconductors – N-channel 100V 16 mΩ standard level MOSFET in D2PAK

PSMN016-100BS
N-channel 100V 16 mΩ standard level MOSFET in D2PAK
Rev. 2 — 1 March 2012
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel MOSFET in a D2PAK packages qualified to 175C. This product
is designed and qualified for use in a wide range of industrial, communications and
domestic equipment.
1.2 Features and benefits
 High efficiency due to low switching
and conduction losses
 Suitable for standard level gate drive
1.3 Applications
 DC-to-DC converters
 Load switching
 Motor control
 Server power supplies
1.4 Quick reference data
Table 1. Quick reference data
Symbol
Parameter
V_DS
drain-source voltage
I_D
drain current
P_tot
total power dissipation
T_j
junction temperature
Static characteristics
R_DSon
drain-source on-state
resistance
Dynamic characteristics
Q_GD
gate-drain charge
Q_G(tot)
total gate charge
Avalanche ruggedness
E_DS(AL)S
non-repetitive drain-source
avalanche energy
Conditions
T_j ≥ 25 °C; T_j ≤ 175 °C
T_j = 25 °C; V_GS = 10 V; see Figure 1
T_mb = 25 °C; see Figure 2
V_GS = 10 V; I_D = 15 A; T_j = 100 °C; see
Figure 12
V_GS = 10 V; I_D = 15 A; T_j = 25 °C;
see Figure 13
V_GS = 10 V; I_D = 30 A; V_DS = 50 V;
see Figure 14; see Figure 15
V_GS = 10 V; T_j(init) = 25 °C; I_D = 60 A;
V_sup ≤ 100 V; unclamped; R_GS = 50 Ω
Min Typ Max Unit
-
-
100 V
-
-
57 A
-
-
148 W
-55 -
175 °C
-
-
28.8 mΩ
-
13
16
mΩ
-
15
-
nC
-
49 -
nC
-
-
101 mJ