PSMN016-100BS_15 Datasheet, PDF (3/14 Pages) NXP Semiconductors – N-channel 100V 16 mΩ standard level MOSFET in D2PAK

NXP Semiconductors
PSMN016-100BS
N-channel 100V 16 mΩ standard level MOSFET in D2PAK
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80
I_D
(A)
60
40
20
0
0
50
100
150
200
T_mb (°C)
120
P_der
(%)
80
03aa16
40
0
0
50
100
150
200
T_mb (°C)
Fig 1. Continuous drain current as a function of
mounting base temperature
10³
I_D
(A)
10²
Limit R_DSon = V_DS / I_D
10
1
10^−1
1
DC
10
Fig 2. Normalized total power dissipation as a
function of mounting base temperature
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t_p = 10 μs
100 μs
1 ms
10 ms
100 ms
10²
10³
V_DS (V)
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
PSMN016-100BS
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 1 March 2012
© NXP B.V. 2012. All rights reserved.
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