PSMN016-100BS_15 Datasheet, PDF (6/14 Pages) NXP Semiconductors – N-channel 100V 16 mΩ standard level MOSFET in D2PAK

NXP Semiconductors
PSMN016-100BS
N-channel 100V 16 mΩ standard level MOSFET in D2PAK
Table 6. Characteristics …continued
Symbol
Parameter
Source-drain diode
V_SD
source-drain voltage
t_rr
reverse recovery time
Q_r
recovered charge
Conditions
Min Typ Max Unit
I_S = 15 A; V_GS = 0 V; T_j = 25 °C;
-
see Figure 17
I_S = 10 A; dI_S/dt = 100 A/µs; V_GS = 0 V;
-
V_DS = 50 V
-
0.8 1.2 V
54
-
ns
126 -
nC
60
I_D
(A)
45
001aal315
80
g_fs
(S)
60
001aal316
30
40
15
0
0
T_j = 175 °C
T_j = 25 °C
2
4
6
V_GS (V)
20
0
0
15
30
45
60
I_D (A)
Fig 5. Transfer Characteristic: drain current as a
Fig 6. forward transconductance as a function of
function of gate-source voltage; typical values
drain current; typical values
4000
C
(pF)
C_iss
3000
001aal318
30
R_DSon
(mΩ)
25
001aal319
2000
20
C_rss
15
1000
10
0
0
3
6
9
12
V_GS (V)
5
0
5
10
15
20
V_GS (V)
Fig 7. Input and revers transfer capacitances as a
Fig 8. Drain-source on-state resistance as a function
function of gate-source voltage; typical values
of gate-source voltage; typical values
PSMN016-100BS
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 1 March 2012
© NXP B.V. 2012. All rights reserved.
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