PSMN016-100BS_15 Datasheet, PDF (4/14 Pages) NXP Semiconductors – N-channel 100V 16 mΩ standard level MOSFET in D2PAK

NXP Semiconductors
PSMN016-100BS
N-channel 100V 16 mΩ standard level MOSFET in D2PAK
5. Thermal characteristics
Table 5.
Symbol
R_th(j-mb)
R_th(j-a)
Thermal characteristics
Parameter
thermal resistance from junction to mounting base
thermal resistance from junction to ambient
[1] minimum footprint; mounted on a printed-circuit board to ambient
Conditions
see Figure 4
Min
-
[1] _-
Typ Max Unit
0.56 1.01 K/W
50
-
K/W
1
Z_{th (j-mb)}
(K/W)
δ = 0.5
10^-1 0.2
0.1
0.05
0.02
10^-2
10^{-3 single shot}
003aag772
P
δ = ^tp
T
10^-4
10^-6
10^-5
10^-4
10^-3
10^-2
10^-1
t_p
t
T
1
10
t_p (s)
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration; typical
values
PSMN016-100BS
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 1 March 2012
© NXP B.V. 2012. All rights reserved.
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