PSMN016-100BS_15 Datasheet, PDF (7/14 Pages) NXP Semiconductors – N-channel 100V 16 mΩ standard level MOSFET in D2PAK

NXP Semiconductors
PSMN016-100BS
N-channel 100V 16 mΩ standard level MOSFET in D2PAK
60
I_D
(A)
45
10.0
8.0
6.0
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5.5
30
5.2
5.0
15
V_GS (V) = 4.5
0
0
0.5
1
1.5
2
V_DS (V)
5
V_GS(th)
(V)
4
3
2
1
0
−60
0
003aad280
max
typ
min
60
120
180
T_j (°C)
Fig 9. Output characteristics: drain current as a
Fig 10. Gate-source threshold voltage as a function of
function of drain-source voltage; typical values
junction temperature
10^−1
I_D
(A)
10^−2
10^−3
10^−4
03aa35
min typ max
3.2
a
2.4
1.6
003aad774
0.8
10^−5
10^−6
0
2
4
6
V_GS (V)
0
-60
0
60
120
180
T_j (°C)
Fig 11. Sub-threshold drain current as a function of
gate-source voltage
Fig 12. Normalized drain-source on-state resistance
factor as a function of junction temperature
PSMN016-100BS
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 1 March 2012
© NXP B.V. 2012. All rights reserved.
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