PIP212-12M Datasheet, PDF (8/21 Pages) NXP Semiconductors – DC-to-DC converter powertrain

Philips Semiconductors
PIP212-12M
DC-to-DC converter powertrain
10. Characteristics
Table 6: Characteristics
V_DDC = 12 V; T_j = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Static characteristics
V_DDC
V_th(UVLO)
control circuit supply voltage
25 °C ≤ T_j ≤ 150 °C
undervoltage lockout threshold voltage turn on
turn off
V_IH
V_IL
I_LI
I_DDC
V_DDG
V_REG5V
HIGH-level input voltage
LOW-level input voltage
input leakage current
control circuit supply current
gate driver supply voltage
5 V regulated supply output voltage at
pin REG5V
0 V ≤ V_I ≤ 5 V
f_i = 0 Hz, V_I = 0 V
f_i = 500 kHz, VDDG_EN = open
f_i = 500 kHz, VDDG_EN = ground
I_L = 65 mA
I_L = 10 mA
I_REG5V
5 V regulated supply output current
from pin REG5V
V_REG5V = 4.5 V
V_th(en)
enable threshold voltage at pin
DISABLE
V_DDC > 4.5 V
V_th(dis)
disable threshold voltage at pin
DISABLE
V_DDC > 4.5 V
T_otp
T_otp(hys)
P_tot
over temperature trip point
over temperature trip hysteresis
total power dissipation
Dynamic characteristics
V_DDO = 12 V; I_O(AV) = 25 A;
V_O = 1.3 V; T_pcb = 90 °C;
f_i = 500 kHz
f_i = 1 MHz
t_d(on)(IH-OH) turn-on delay time input HIGH to
output HIGH
V_DDO = 12 V; I_O(AV) = 12.5 A
t_{d(off)(IL-OL)} turn-off delay time input LOW to output
LOW
t_d(3-state)
3-state delay time
Min
6
4.1
3.75
[1] _3.3
[1] _1.4
-
-
-
-
6
4.5
-
-
-
165
-
-
-
-
-
-
Typ
12
4.2
3.9
3.5
1.5
170
8.2
50
12
6.5
5.0
24.0
3.1
1.6
-
15
4.5
5.8
-
-
100
Max
14
4.4
4.0
3.7
1.6
-
-
-
7
5.5
-
-
-
180
-
-
-
85
45
-
Unit
V
V
V
V
V
µA
mA
mA
mA
V
V
mA
V
V
°C
°C
W
W
ns
ns
ns
[1] If the input voltage remains between V_IH and V_IL (2.5 V typ) for longer than t_d(3-state), then both MOSFETs are turned off.
9397 750 14586
Preliminary data sheet
Rev. 02 — 2 March 2005
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
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