PIP212-12M Datasheet, PDF (7/21 Pages) NXP Semiconductors – DC-to-DC converter powertrain

Philips Semiconductors
PIP212-12M
DC-to-DC converter powertrain
8. Limiting values
Table 4: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
V_DDC
V_DDO
V_I
V_DDG
V_O
V_CB
I_O(AV)
I_ORM
V_PRDY
V_DISABLE
V_REG5V
control circuit supply voltage
output stage supply voltage
input voltage
gate drive supply voltage
output voltage
bootstrap capacitor voltage
average output current
repetitive peak output current
power ready voltage at pin PRDY
V_DDC = 12 V; T_pcb ≤ 90 °C;
f_i = 1 MHz
V_DDC = 12 V; t_p ≤ 10 µs
driver enable voltage at pin DISABLE
5 V regulated supply output voltage at
pin REG5V
V_AIS
output voltage at pin AIS
P_tot
total power dissipation
T_stg
storage temperature
T_j
junction temperature
T_pcb = 25 °C
T_pcb = 90 °C
[1] Pulse width and repetition rate limited by maximum value of T_j.
[2] Assumes a thermal resistance from junction to printed-circuit board of 5 K/W.
9. Thermal characteristics
Table 5:
Symbol
R_th(j-mb)
Thermal characteristics
Parameter
thermal resistance from junction
to mounting base
Conditions
device tested with upper and
lower MOSFETs in series
Min
−0.5
−0.5
−0.5
−0.5
−0.5
−0.5
-
[1] _-
−0.5
−0.5
−0.5
−0.5
[2] _-
[2] _-
−55
−55
Max
Unit
+15
V
+24
V
+12.6
V
+12.6
V
V_DDO + 0.5 V
V_O + 15 V
30
A
60
A
+12.6
V
+12.6
V
+12.6
V
+12.6
V
25
W
12
W
+150
°C
+150
°C
Min Typ Max Unit
-
3
5
K/W
9397 750 14586
Preliminary data sheet
Rev. 02 — 2 March 2005
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
7 of 21