PHP29N08T Datasheet, PDF (8/13 Pages) NXP Semiconductors – TrenchMO standard level FET

Philips Semiconductors
PHP/PHB29N08T
TrenchMOS™ standard level FET
30
IS
(A)
VGS = 0 V
20
03aj10
15
VGS
(V)
ID = 29 A
Tj = 25 °C
10
VDD = 15 V
03aj12
60 V
37.5 V
10
5
175 °C
Tj = 25 °C
0
0
0.3
0.6
0.9
1.2
VSD (V)
0
0
10
20 _{QG (nC)} 30
T_j = 25 °C and 175 °C; V_GS = 0 V
Fig 12. Source (diode forward) current as a function of
source-drain (diode forward) voltage; typical
values.
I_D = 29 A; V_DD = 15 V, 37.5 V, 60 V
Fig 13. Gate-source voltage as a function of gate
charge; typical values.
9397 750 09651
Product data
Rev. 01 — 29 May 2002
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
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