PHP29N08T Datasheet, PDF (6/13 Pages) NXP Semiconductors – TrenchMO standard level FET

Philips Semiconductors
PHP/PHB29N08T
TrenchMOS™ standard level FET
30
Tj = 25 °C
ID
(A)
20
11 V 9 V
03aj07
8V
7.5 V
7V
30
ID
(A)
VDS > I_D x RDSon
20
03aj09
10
6.5 V
10
VGS = 6 V
0
0
0.5
1
1.5
2
VDS (V)
175 °C
Tj = 25 °C
0
0
2
4
6
8
10
VGS (V)
T_j = 25 °C
Fig 5. Output characteristics: drain current as a
function of drain-source voltage; typical values.
T_j = 25 °C and 175 °C; V_DS > I_D x R_DSon
Fig 6. Transfer characteristics: drain current as a
function of gate-source voltage; typical values.
03aj08
80
3
Tj = 25 °C
VGS = 7 V
7.5 V
RDSon
a
(mΩ)
60
8V
2
9V
11 V
40
1
03ac63
20
0
10
20
30
ID (A)
0
-60
0
60
120 _{Tj (}o_C) 180
T_j = 25 °C
Fig 7. Drain-source on-state resistance as a function
of drain current; typical values.
a = -------^R----^D----^S--^o---ⁿ-------
R _{D S o n ( 25 °C )}
Fig 8. Normalized drain-source on-state resistance
factor as a function of junction temperature.
9397 750 09651
Product data
Rev. 01 — 29 May 2002
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
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