PHP29N08T Datasheet, PDF (7/13 Pages) NXP Semiconductors – TrenchMO standard level FET

Philips Semiconductors
PHP/PHB29N08T
TrenchMOS™ standard level FET
6.4
VGS(th)
(V)
4.8
3.2
max
typ
min
03aj14
10-2
ID
(A)
10-3
10-4
03aj13
min
typ
max
1.6
10-5
0
-60
0
60
120
180
Tj (°C)
10-6
2
3
4
5
6
VGS (V)
I_D = 2mA; V_DS = V_GS
Fig 9. Gate-source threshold voltage as a function of
junction temperature.
T_j = 25 °C; V_DS = 10 V
Fig 10. Sub-threshold drain current as a function of
gate-source voltage.
104
C
(pF)
103
03aj11
Ciss
102
Coss
Crss
10
10-1
1
10
102
VDS (V)
V_GS = 0 V; f = 1 MHz
Fig 11. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values.
9397 750 09651
Product data
Rev. 01 — 29 May 2002
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
7 of 13