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PHP29N08T Datasheet, PDF (5/13 Pages) NXP Semiconductors – TrenchMO standard level FET
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Philips Semiconductors
PHP/PHB29N08T
TrenchMOS™ standard level FET
8. Characteristics
Table 5: Characteristics
Tj = 25 °C unless otherwise specified
Symbol Parameter
Conditions
Static characteristics
V(BR)DSS drain-source breakdown voltage
VGS(th) gate-source threshold voltage
IDSS
drain-source leakage current
IGSS
RDSon
gate-source leakage current
drain-source on-state resistance
Dynamic characteristics
ID = 0.25 mA; VGS = 0 V
Tj = 25 °C
Tj = −55 °C
ID = 2 mA; VDS = VGS; Figure 9
Tj = 25 °C
Tj = 175 °C
Tj = −55 °C
VDS = 75 V; VGS = 0 V
Tj = 25 °C
Tj = 175 °C
VGS = ±20 V; VDS = 0 V
VGS = 11 V; ID = 14 A; Figure 7 and 8
Tj = 25 °C
Tj = 175 °C
Qg(tot) total gate charge
Qgs
gate-source charge
Qgd
gate-drain (Miller) charge
Ciss
input capacitance
Coss
output capacitance
Crss
reverse transfer capacitance
td(on)
turn-on delay time
tr
rise time
td(off)
turn-off delay time
tf
fall time
Source-drain diode
ID = 29 A; VDD = 60 V; VGS = 10 V; Figure 13
VGS = 0 V; VDS = 25 V; f = 1 MHz; Figure 11
VDD = 37.5 V; ID = 29 A;
VGS = 10 V; RG = 5.6 Ω
VSD
source-drain (diode forward) voltage IS = 14 A; VGS = 0 V; Figure 12
trr
reverse recovery time
IS = 14 A; dIS/dt = −100 A/µs; VGS = 0 V
Qr
recovered charge
Min Typ Max Unit
75 -
-
V
70 -
-
V
34
2.1 -
-
-
5V
-
V
5.4 V
-
0.05 10 µA
-
-
500 µA
-
10 100 nA
-
40 50 mΩ
-
96 120 mΩ
-
19 -
nC
-
6-
nC
-
9-
nC
-
810 -
pF
-
140 -
pF
-
85 -
pF
-
9.5 -
ns
-
70 -
ns
-
15 -
ns
-
9-
ns
-
0.95 1.2 V
-
50 -
ns
65 -
nC
9397 750 09651
Product data
Rev. 01 — 29 May 2002
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
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