PHP29N08T Datasheet, PDF (3/13 Pages) NXP Semiconductors – TrenchMO standard level FET

Philips Semiconductors
PHP/PHB29N08T
TrenchMOS™ standard level FET
120
Pder
(%)
80
03aa16
120
Ider
(%)
80
03aa24
40
40
0
0
50
100
150
200
Tmb (°C)
P_der
=
-------^P----^t--^o--^t-------
P
×
100
%
t o t ( 25 ^°C )
Fig 1. Normalized total power dissipation as a
function of mounting base temperature.
103
ID
(A)
102
Limit RDSon = VDS / ID
0
0
50
100
150
200
Tmb (°C)
I_der
=
-------^I---^D--------
I
× 100%
D ( 25 ^°C )
Fig 2. Normalized continuous drain current as a
function of mounting base temperature.
03aj06
tp = 10 µs
10
100 µs
DC
1 ms
1
1
10
102
103
VDS (V)
T_mb = 25 °C; I_DM is single pulse; V_GS = 11V.
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
9397 750 09651
Product data
Rev. 01 — 29 May 2002
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
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