PHP29N08T Datasheet, PDF (2/13 Pages) NXP Semiconductors – TrenchMO standard level FET

Philips Semiconductors
PHP/PHB29N08T
TrenchMOS™ standard level FET
5. Quick reference data
Table 2: Quick reference data
Symbol Parameter
V_DS
I_D
P_tot
T_j
R_DSon
drain-source voltage (DC)
drain current (DC)
total power dissipation
junction temperature
drain-source on-state resistance
6. Limiting values
Conditions
25 °C ≤ T_j ≤ 175 °C
T_mb = 25 °C; V_GS = 11 V
T_mb = 25 °C
V_GS = 11 V; I_D = 14 A
T_j = 25 °C
T_j = 175 °C
Table 3: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
V_DS
V_DGR
V_GS
I_D
drain-source voltage (DC)
drain-gate voltage (DC)
gate-source voltage
drain current (DC)
I_DM
peak drain current
P_tot
total power dissipation
25 °C ≤ T_j ≤ 175 °C
25 °C ≤ T_j ≤ 175 °C; R_GS = 20 kΩ
T_mb = 25 °C; V_GS = 11 V; Figure 2 and 3
T_mb = 100 °C; V_GS = 11 V; Figure 2
T_mb = 25 °C; pulsed; t_p ≤ 10 µs; Figure 3
T_mb = 25 °C; Figure 1
T_stg
storage temperature
T_j
junction temperature
Source-drain diode
I_S
source (diode forward) current (DC) T_mb = 25 °C
I_SM
peak source (diode forward) current T_mb = 25 °C; pulsed; t_p ≤ 10 µs
Typ
Max Unit
-
75
V
-
27
A
-
88
W
-
175
°C
40
50
mΩ
96
120
mΩ
Min
Max Unit
-
75
V
-
75
V
-
±30
V
-
27
A
-
19.2 A
-
108
A
-
88
W
−55
+175 °C
−55
+175 °C
-
27
A
-
108
A
9397 750 09651
Product data
Rev. 01 — 29 May 2002
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
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