PHP125 Datasheet, PDF (8/12 Pages) NXP Semiconductors – P-channel enhancement mode MOS transistor

Philips Semiconductors
P-channel enhancement mode
MOS transistor
1.2
handbook, halfpage
k
1.1
MBG759
1.0
0.9
0.8
0.7
0.6
−75
−25
25
75
125
175
Tj (^oC)
k = -V----_G^V----_SG---_t-^Sh---^t--^h_{a---t--a--2-t--5--T--°}--^j-C--- Typical V_GSth at:
(1) I_D = −1 mA; V_DS =V_GS .
Fig.12 Temperature coefficient of gate-source
threshold voltage; typical values.
Product specification
PHP125
1.8
handbook, halfpage
k
1.6
1.4
1.2
MBG760
(1)
(2)
1.0
0.8
0.6
−75
−25
25
75
k = _R-----D-R---_S-^D--_o--^S-_n--^o--a-ⁿ---t--a-2--t-5---T---_°-^j--C--- Typical R_DSon at:
(1) I_D = −1 A; V_GS = −10 V.
(2) I_D = −0.5 A; V_GS = −4.5 V.
125
175
Tj (^oC)
Fig.13 Temperature coefficient of drain-source
on-resistance; typical values.
1997 Jun 18
8