PHP125 Datasheet, PDF (2/12 Pages) NXP Semiconductors – P-channel enhancement mode MOS transistor

Philips Semiconductors
P-channel enhancement mode
MOS transistor
Product specification
PHP125
FEATURES
• High-speed switching
• No secondary breakdown
• Very low on-resistance.
APPLICATIONS
• Motor and actuator driver
• Power management
• Synchronized rectification.
PINNING - SO8 (SOT96-1)
PIN
SYMBOL
1
n.c.
2
s
3
s
4
g
5
d
6
d
7
d
8
d
DESCRIPTION
not connected
source
source
gate
drain
drain
drain
drain
DESCRIPTION
P-channel enhancement mode MOS transistor in an 8-pin
plastic SO8 (SOT96-1) package.
handbook, halfpage
8
1
dddd
5
4
MAM115
n.c. s s g
Fig.1 Simplified outline and symbol.
CAUTION
The device is supplied in an antistatic package.
The gate-source input must be protected against static
discharge during transport or handling.
QUICK REFERENCE DATA
SYMBOL
V_DS
V_SD
V_GS
V_GSth
I_D
R_DSon
P_tot
PARAMETER
drain-source voltage (DC)
source-drain diode forward voltage
gate-source voltage (DC)
gate-source threshold voltage
drain current (DC)
drain-source on-state resistance
total power dissipation
CONDITIONS
I_S = −1.25 A
I_D = −1 mA; V_DS = V_GS
T_s = 80 °C
I_D = −1 A; V_GS = −10 V
T_s = 80 °C
MIN.
−
−
−
−1
−
−
−
MAX.
−30
−1.6
±20
−2.8
−2.5
0.25
2.8
UNIT
V
V
V
V
A
Ω
W
1997 Jun 18
2