PHP125 Datasheet, PDF (6/12 Pages) NXP Semiconductors – P-channel enhancement mode MOS transistor

Philips Semiconductors
P-channel enhancement mode
MOS transistor
Product specification
PHP125
handbook^−,¹h⁰alfpage
VGS
(V)
−8
MBG754
−6
−4
−2
0
0
−2
−4
−6
−8
−10
Qg (nC)
V_DD = −15 V: I_D = −1 A.
Fig.5 Gate-source voltage as a function of total
gate charge; typical values.
−12
handboo_IDk, halfpage
(A)
−10
VGS =
−10 V
−7.5 V
−6 V
−8
−6
−4
−2
0
0
−2
−4
−6
MBG756
−5 V
−4.5 V
−4 V
−3.5 V
−3 V
−2.5 V
−8
−10
VDS (V)
T_j = 25 °C.
Fig.6 Output characteristics; typical values.
handbook^−,¹h⁰alfpage
ID
(A)
−8
MBG757
−6
−4
−2
0
0
−2
−4
−6 _{VGS (V)} −8
V_DS = −10 V; T_j = 25 °C.
Fig.7 Transfer characteristics; typical values.
1997 Jun 18
−8
handbook, halfpage
IS
(A)
−6
−4
−2
MBG758
(1) (2)
(3)
0
0
−0.4
V_GD = 0.
(1) T_j = 150 °C.
(2) T_j = 25 °C.
(3) T_j = −65 °C.
−0.8
−1.2
−1.6 −2 −2.4
VSD (V)
Fig.8 Source current as a function of source-drain
diode forward voltage; typical values.
6