PHP125 Datasheet, PDF (5/12 Pages) NXP Semiconductors – P-channel enhancement mode MOS transistor

Philips Semiconductors
P-channel enhancement mode
MOS transistor
Product specification
PHP125
CHARACTERISTICS
T_j = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
V_(BR)DSS
V_GSth
I_DSS
I_GSS
R_DSon
drain-source breakdown voltage
gate-source threshold voltage
drain-source leakage current
gate leakage current
drain-source on-state resistance
C_iss
input capacitance
C_oss
output capacitance
C_rss
reverse transfer capacitance
Q_G
total gate charge
Q_GS
gate-source charge
Q_GD
gate-drain charge
Switching times (see Fig.11)
t_d(on)
t_f
t_on
t_d(off)
t_r
t_off
turn-on delay time
fall time
turn-on switching time
turn-off delay time
rise time
turn-off switching time
Source-drain diode
V_SD
source-drain forward voltage
t_rr
reverse recovery time
CONDITIONS
V_GS = 0; I_D = −10 µA
V_GS = V_DS; I_D = −1 mA
V_GS = 0; V_DS = −24 V
V_GS = ±20 V; V_DS = 0
V_GS = −4.5 V; I_D = −0.5 A
V_GS = −10 V; I_D = −1 A
V_GS = 0; V_DS = −24 V; f = 1 MHz
V_GS = 0; V_DS = −24 V; f = 1 MHz
V_GS = 0; V_DS = −24 V; f = 1 MHz
V_GS = −10 V; V_DS = −15 V;
I_D = −1 A
V_GS = −10 V; V_DS = −15 V;
I_D = −1 A
V_GS = −10 V; V_DS = −15 V;
I_D = −1 A
MIN.
−30
−1
−
−
−
−
−
−
−
−
−
−
TYP.
−
−
−
−
0.33
0.22
250
140
50
10
1
3
MAX.
−
−2.8
−100
±100
0.4
0.25
−
−
−
25
−
−
UNIT
V
V
nA
nA
Ω
Ω
pF
pF
pF
nC
nC
nC
V_GS = 0 to −10 V; V_DD = −15 V; −
I_D = −1 A; R_L = 15 Ω; R_gen = 6 Ω _−
−
V_GS =−10 to 0 V; V_DD = −15 V; −
I_D = −1 A; R_L = 15 Ω; R_gen = 6 Ω _−
−
4.5 −
ns
3.5 −
ns
8
16
ns
25
−
ns
15
−
ns
40
80
ns
V_GD = 0; I_S = −1.25 A
−
I_S = −1.25 A; di/dt = 100 A/µs
−
−
−1.6 V
150 200 ns
1997 Jun 18
5