PHP125 Datasheet, PDF (7/12 Pages) NXP Semiconductors – P-channel enhancement mode MOS transistor

Philips Semiconductors
P-channel enhancement mode
MOS transistor
Product specification
PHP125
handbook¹,⁰h⁴alfpage
RDSon
(mΩ)
10³
MBG849
ID= 100 mA
500 mA
1A
2A
3.4 A
10²
0
−2
−4
−6
−8
−10
VGS (V)
V_DS ≥ I_D × R_DSon; T_j = 25 °C.
Fig.9 Drain source on-resistance as a function of
gate-source voltage; typical values.
handboo⁶k,⁰h⁰alfpage
C
(pF)
400
200
0
0
−8
MBG850
Ciss
Coss
Crss
−16 _{VDS (V)} −24
V_GS = 0; f = 1 MHz; T_j = 25 °C.
Fig.10 Capacitance as a function of drain-source
voltage; typical values.
handbook, full pagewidth
Vin
−VDD
RL
Vout
0
Vin
0
Vout
10 %
90 %
10 %
10 %
90 %
td(on)
tr
ton
td(off)
toff
90 %
tf
MGD391
1997 Jun 18
Fig.11 Switching time test circuit and input and output waveforms.
7