PHN405 Datasheet, PDF (8/12 Pages) NXP Semiconductors – 4 N-channel 60 mohm FET array enhancement mode MOS transistors

Philips Semiconductors
4 N-channel 60 mΩ FET array
enhancement mode MOS transistors
Product specification
PHN405
8
handbook, halfpage
IS
(A)
6
4
2
MDA800
(1) (2)
(3)
10
handbook, halfpage
RDSon
(Ω)
1
(1)(2)(3)(4)(5)(6)(7)(8)(9)
MDA801
10^−1
0
0
0.4
0.8
1.2
VSD (V)
t_p = 300 µs; δ = 0.
(1) T_amb = 150 °C.
(2) T_amb = 25 °C.
(3) T_amb = −65 °C.
Fig.10 Source current as a function of source-drain
diode forward voltage; typical values.
10^−2
0
2
4
6
8
10
VGS (V)
T_amb = 25 °C; t_p = 300 µs; δ = 0.
(1) I_D = 0.25 A.
(2) I_D = 0.5 A.
(3) I_D = 1 A.
(4) I_D = 2 A.
(5) I_D = 4 A.
(6) I_D = 8 A.
(7) I_D = 10 A.
(8) I_D = 13 A.
(9) I_D = 16 A.
Fig.11 Drain-source on-state resistance as a function
of gate-source voltage; typical values.
1998 Mar 17
8