PHN405 Datasheet, PDF (4/12 Pages) NXP Semiconductors – 4 N-channel 60 mohm FET array enhancement mode MOS transistors

Philips Semiconductors
4 N-channel 60 mΩ FET array
enhancement mode MOS transistors
Product specification
PHN405
2
handbook, halfpage
Ptot
(W)
1.6
1.2
0.8
0.4
0
0
50
MDA804
100
150
200
Ts (°C)
Fig.2 Power derating curve.
handboo¹k,⁰h²alfpage
ID
(A)
10
(1)
1
P
10 ¹
δ
=
tp
T
10
2
10
1
tp
t
T
1
MDA805
tp =
1 ms
10 ms
100 ms
DC
1s
10
10 ²
VDS (V)
δ = 0.01; T_s = 80 °C.
(1) R_DSon limitation.
Fig.3 SOAR.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
Per FET
R_{th j-s}
thermal resistance from junction to soldering point
note 1
note 2
note 3
Notes
1. When only one FET dissipates.
2. When either FETs 1 and 3 or 2 and 4 dissipate an equal amount of power.
3. When all four FETs dissipate an equal amount of power.
VALUE UNIT
50
K/W
56
K/W
64
K/W
1998 Mar 17
4