PHN405 Datasheet, PDF (5/12 Pages) NXP Semiconductors – 4 N-channel 60 mohm FET array enhancement mode MOS transistors

Philips Semiconductors
4 N-channel 60 mΩ FET array
enhancement mode MOS transistors
Product specification
PHN405
CHARACTERISTICS
T_j = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
Per FET
V_(BR)DSS
V_GSth
I_DSS
I_GSS
R_DSon
drain-source breakdown voltage
gate-source threshold voltage
drain-source leakage current
gate leakage current
drain-source on-state resistance
C_iss
input capacitance
C_oss
output capacitance
C_rss
reverse transfer capacitance
Q_G
total gate charge
Q_GS
gate-source charge
Q_GD
gate-drain charge
Switching times
t_d(on)
turn-on delay time
t_f
fall time
t_on
turn-on switching time
t_d(off)
turn-off delay time
t_r
rise time
t_off
turn-off switching time
Current monitor
R_DMon on-state drain-monitor resistance
I_S/I_M
C_Moss
source to monitor current ratio
output capacitance of monitor cells
Source-drain diode
V_SD
source-drain diode forward voltage
t_rr
reverse recovery time
CONDITIONS
MIN. TYP. MAX. UNIT
V_GS = 0; I_D = 10 µA
30
V_GS = V_DS; I_D = 1 mA
1
V_GS = 0; V_DS = 24 V
−
V_GS = ±20 V; V_DS = 0
−
V_GS = 4.5 V; I_D = 1 A
−
V_GS = 10 V; I_D = 2 A
−
V_GS = 0; V_DS = 24 V; f = 1 MHz −
V_GS = 0; V_DS = 24 V; f = 1 MHz −
V_GS = 0; V_DS = 24 V; f = 1 MHz −
V_GS = 10 V; V_DD = 15 V; I_D = 1 A −
V_DD = 15 V; I_D = 1 A;
−
V_DD = 15 V; I_D = 1 A;
−
−
−
V
−
2.8 V
−
100 nA
−
±100 nA
−
120 mΩ
−
60
mΩ
230 −
pF
90
−
pF
50
−
pF
7.1 10
nC
0.5 −
nC
2.4 −
nC
V_GS = 0 to 10 V; V_DD = 20 V;
−
I_D = 1 A; R_gen = 6 Ω
V_GS = 0 to 10 V; V_DD = 20 V;
−
I_D = 1 A; R_gen = 6 Ω
V_GS = 0 to 10 V; V_DD = 20 V;
−
I_D = 1 A; R_gen = 6 Ω
V_GS = 10 to 0 V; V_DD = 20 V;
−
I_D = 1 A; R_gen = 6 Ω
V_GS = 10 to 0 V; V_DD = 20 V;
−
I_D = 1 A; R_gen = 6 Ω
V_GS = 10 to 0 V; V_DD = 20 V;
−
I_D = 1 A; R_gen = 6 Ω
3.5 −
ns
3.5 −
ns
7
10
ns
12
−
ns
8
−
ns
20
30
ns
V_GM = 10 V; I_D = 25 mA; I_S = 0 −
−
4
Ω
V_GM = 4.5 V; I_D = 12 mA; I_S = 0 −
−
8
Ω
V_GS = 10 V; I_D = 2 A; V_MS = 0 −
66.7 −
V_GM = V_MS = 0; V_DS = 24 V;
−
1.35 −
pF
f = 1 MHz
V_GD = 0; I_S = 1.25 A
−
−
1
V
I_S = 1.25 A; di/dt = −100 A/µs −
25
−
ns
1998 Mar 17
5